In general, according to one embodiment, a semiconductor memory device includes a substrate, a stacked body, a semiconductor pillar, a memory film, a partitioning member, a first interlayer insulating film, and a first plug. The stacked body is provided on the substrate, and including a plurality of electrode films and a plurality of insulating films. The semiconductor pillar is provided in the stacked body. The partitioning member is provided in the stacked body. The first plug is connected to the semiconductor pillar. A central axis of the first plug is shifted from a central axis of the semiconductor pillar so as to approach the nearest partitioning member.