Invention Grant
- Patent Title: Method of manufacturing semiconductor device
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Application No.: US14864912Application Date: 2015-09-25
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Publication No.: US09613995B2Publication Date: 2017-04-04
- Inventor: Tse-Wei Chung , Tsung-Hui Chou , Hsu-Ting Chang
- Applicant: Powerchip Technology Corporation
- Applicant Address: TW Hsinchu
- Assignee: Powerchip Technology Corporation
- Current Assignee: Powerchip Technology Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW104121918A 20150706
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/146

Abstract:
A semiconductor device including a substrate, at least one sensor, a dielectric layer, at least one light pipe structure, at least one pad, a shielding layer, and a protection layer is provided. The sensor is located in the substrate of a first region. The dielectric layer is located on the substrate. The light pipe structure is located in the dielectric layer of the first region. The light pipe structure corresponds to the sensor. The pad is located in the dielectric layer of a second region. The shielding layer is located on the dielectric layer, wherein the light pipe structure is surrounded by the shielding layer. The protection layer is located on the shielding layer. At least one pad opening is disposed in the dielectric layer, the shielding layer, and the protection layer above the pad. The pad opening exposes a top surface of the corresponding pad.
Public/Granted literature
- US20170012070A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-01-12
Information query
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