Invention Grant
- Patent Title: High mobility transport layer structures for rhombohedral Si/Ge/SiGe devices
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Application No.: US14202699Application Date: 2014-03-10
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Publication No.: US09614026B2Publication Date: 2017-04-04
- Inventor: Sang Hyouk Choi , Yeonjoon Park , Glen C. King , Hyun-Jung Kim , Kunik Lee
- Applicant: The United States of America as Represented by the National Aeronautics and Space Administration
- Applicant Address: US DC Washington
- Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
- Current Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
- Current Assignee Address: US DC Washington
- Agent Jennifer L. Riley; Andrea Z. Warmbier
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/165 ; H01L29/15 ; H01L31/0352 ; H01L31/0368 ; H01L35/22 ; H01L29/778
Abstract:
An electronic device includes a trigonal crystal substrate defining a (0001) C-plane. The substrate may comprise Sapphire or other suitable material. A plurality of rhombohedrally aligned SiGe (111)-oriented crystals are disposed on the (0001) C-plane of the crystal substrate. A first region of material is disposed on the rhombohedrally aligned SiGe layer. The first region comprises an intrinsic or doped Si, Ge, or SiGe layer. The first region can be layered between two secondary regions comprising n+doped SiGe or n+doped Ge, whereby the first region collects electrons from the two secondary regions.
Public/Granted literature
- US20140264459A1 High Mobility Transport Layer Structures for Rhombohedral Si/Ge/SiGe Devices Public/Granted day:2014-09-18
Information query
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