Invention Grant
- Patent Title: Semiconductor device including an isolation structure and method of manufacturing a semiconductor device
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Application No.: US14977393Application Date: 2015-12-21
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Publication No.: US09614033B2Publication Date: 2017-04-04
- Inventor: Christoph Kadow , Till Schloesser
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102014119698 20141229
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/78 ; H01L21/762 ; H01L29/78 ; H01L21/308 ; H01L29/10 ; H01L29/423 ; H01L29/45

Abstract:
An embodiment of a semiconductor device comprises a first load terminal contact area at a first side of a semiconductor body. A second load terminal contact area is at a second side of the semiconductor body opposite to the first side. A control terminal contact area is at the second side of the semiconductor body. An isolation structure extends through the semiconductor body between the first and second sides. The isolation structure electrically isolates a first part of the semiconductor body from a second part of the semiconductor body. A first thickness of the first part of the semiconductor body is smaller than a second thickness of the second part of the semiconductor body.
Public/Granted literature
- US20160190241A1 Semiconductor Device Including an Isolation Structure and Method of Manufacturing a Semiconductor Device Public/Granted day:2016-06-30
Information query
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