Invention Grant
- Patent Title: Semiconductor structure and method for fabricating the same
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Application No.: US14884787Application Date: 2015-10-16
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Publication No.: US09614034B1Publication Date: 2017-04-04
- Inventor: Jhen-Cyuan Li , Nan-Yuan Huang , Shui-Yen Lu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: CN201510593437 20150917
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/66 ; H01L21/762
Abstract:
The present invention provides a semiconductor structure, including a substrate, having a recess disposed therein, an insulating layer filled in the recess and disposed on a surface of the substrate, and at least one fin structure disposed in the insulating layer, the fin structure consisting of two terminal parts and a central part disposed between two terminal parts. The terminal parts are disposed on the surface of the substrate and directly contact the substrate, and the central part is disposed right above the recess.
Public/Granted literature
- US20170084688A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2017-03-23
Information query
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