The present invention provides a manufacture method of an oxide semiconductor TFT substrate, and the method comprises steps of: 1, forming a gate (2) on a substrate (1); 2, deposing a gate isolation layer (3); 3, forming an island shaped oxide semiconductor layer (4); 4, forming an island shaped photoresistor layer (6) and an island shaped etching stopper layer (5), and the island shaped etching stopper layer (5) covers a central part (41) of the island shaped oxide semiconductor layer (4) and exposes two side parts (43) of the island shaped oxide semiconductor layer (4); 5, implementing ion implantation process to the two side parts (43) of the island shaped oxide semiconductor layer (4); 6, lifting off the island shaped photoresistor layer (6); 7, forming a source/a drain (7), and the source/the drain (7) contact the two side parts (43) of the island shaped oxide semiconductor layer (4) to establish electrical connections; 8, deposing and patterning a protecting layer (8); 9, deposing and patterning a pixel electrode layer (9); 10, implementing anneal process.