Invention Grant
- Patent Title: Semiconductor devices with a thermally conductive layer
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Application No.: US15173487Application Date: 2016-06-03
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Publication No.: US09614046B2Publication Date: 2017-04-04
- Inventor: Lakshminarayan Viswanathan , Bruce M. Green , Darrell G. Hill , L. M. Mahalingam
- Applicant: Freescale Semiconductor, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Agent Bruce M. Green
- Main IPC: H01L31/102
- IPC: H01L31/102 ; H01L29/417 ; H01L23/367 ; H01L21/762 ; H01L21/3205 ; H01L21/04 ; H01L21/28 ; H01L29/778 ; H01L29/66 ; H01L29/20 ; H01L23/48 ; H01L23/373
Abstract:
An embodiment of a semiconductor device includes a semiconductor substrate that includes a host substrate and an upper surface, an active area, a substrate opening in the semiconductor substrate that is partially defined by a recessed surface, and a thermally conductive layer disposed over the semiconductor substrate that extends between the recessed surface and a portion of the semiconductor substrate within the active area. A method for fabricating the semiconductor device includes defining an active area, forming a gate electrode over a channel in the active area, forming a source electrode and a drain electrode in the active area on opposite sides of the gate electrode, etching a substrate opening in the semiconductor substrate that is partially defined by the recessed surface, and depositing a thermally conductive layer over the semiconductor substrate that extends between the recessed surface and a portion of the semiconductor substrate over the channel.
Public/Granted literature
- US20160308010A1 SEMICONDUCTOR DEVICES WITH A THERMALLY CONDUCTIVE LAYER Public/Granted day:2016-10-20
Information query
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