Invention Grant
- Patent Title: Copper contact plugs with barrier layers
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Application No.: US14852320Application Date: 2015-09-11
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Publication No.: US09614052B2Publication Date: 2017-04-04
- Inventor: Li-Lin Su , Ching-Hua Hsieh , Huang-Ming Chen , Hsueh Wen Tsau
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/4763 ; H01L29/66 ; H01L29/49 ; H01L23/485 ; H01L23/522 ; H01L23/532 ; H01L21/768

Abstract:
A device includes a conductive layer including a bottom portion, and a sidewall portion over the bottom portion, wherein the sidewall portion is connected to an end of the bottom portion. An aluminum-containing layer overlaps the bottom portion of the conductive layer, wherein a top surface of the aluminum-containing layer is substantially level with a top edge of the sidewall portion of the conductive layer. An aluminum oxide layer is overlying the aluminum-containing layer. A copper-containing region is over the aluminum oxide layer, and is spaced apart from the aluminum-containing layer by the aluminum oxide layer. The copper-containing region is electrically coupled to the aluminum-containing layer through the top edge of the sidewall portion of the conductive layer.
Public/Granted literature
- US20160064517A1 Copper Contact Plugs with Barrier Layers Public/Granted day:2016-03-03
Information query
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