- Patent Title: Spacers with rectangular profile and methods of forming the same
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Application No.: US14097579Application Date: 2013-12-05
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Publication No.: US09614053B2Publication Date: 2017-04-04
- Inventor: Yu-Sheng Chang , Chung-Ju Lee , Tien-I Bao
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/66 ; H01L29/78 ; H01L21/8234 ; H01L21/033 ; H01L21/308 ; H01L21/311
Abstract:
A method includes forming a spacer layer on a top surface and sidewalls of a patterned feature, wherein the patterned feature is overlying a base layer, A protection layer is formed to contact a top surface and a sidewall surface of the spacer layer. The horizontal portions of the protection layer are removed, wherein vertical portions of the protect layer remain after the removal. The spacer layer is etched to remove horizontal portions of the spacer layer, wherein vertical portions of the spacer layer remain to form parts of spacers.
Public/Granted literature
- US20150162416A1 Spacers with Rectangular Profile and Methods of Forming the Same Public/Granted day:2015-06-11
Information query
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