An integrated circuit device, and a method of forming, including a semiconductor substrate, isolation regions extending into the semiconductor substrate, a semiconductor strip, and a semiconductor fin overlapping and joined to the semiconductor strip is provided. A first dielectric layer and a second dielectric layer are disposed on opposite sidewalls of the semiconductor strip. The integrated circuit device further includes a first conductive liner and a second conductive liner, wherein the semiconductor strip, the first dielectric layer, and the second dielectric layer are between the first conductive liner and the second conductive line. The first conductive liner and the second conductive liner are between, and in contact with, sidewalls of a first portion and a second portion of the isolation regions.