- Patent Title: Semiconductor device having fin structure that includes dummy fins
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Application No.: US15188998Application Date: 2016-06-22
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Publication No.: US09614061B2Publication Date: 2017-04-04
- Inventor: En-Chiuan Liou
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: TW103142048A 20141203
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/8234 ; H01L29/417 ; H01L21/285 ; H01L21/768 ; H01L29/165 ; H01L29/267 ; H01L29/161 ; H01L29/24
Abstract:
A semiconductor device includes: a substrate, a fin-shaped structure on the substrate, and a dummy fin-shaped structure on the substrate and adjacent to the fin-shaped structure. Preferably, the fin-shaped structure includes a gate structure thereon and a first epitaxial layer adjacent to two sides of the gate structure, and the dummy fin-shaped structure includes a second epitaxial layer thereon. A contact plug is disposed on the first epitaxial layer and the second epitaxial layer. In addition, the dummy fin-shaped structure includes a curve, in which the curve is omega shaped.
Public/Granted literature
- US20160300923A1 SEMICONDUCTOR DEVICE HAVING FIN STRUCTURE THAT INCLUDES DUMMY FINS Public/Granted day:2016-10-13
Information query
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