Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14061082Application Date: 2013-10-23
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Publication No.: US09614075B2Publication Date: 2017-04-04
- Inventor: Fujio Masuoka , Hiroki Nakamura
- Applicant: Unisantis Electronics Singapore Pte. Ltd.
- Applicant Address: SG Peninsula Plaza
- Assignee: UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.
- Current Assignee: UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.
- Current Assignee Address: SG Peninsula Plaza
- Agency: Brinks Gilson & Lione
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8234 ; H01L21/8238 ; H01L29/423 ; H01L29/66 ; H01L21/265 ; H01L21/308 ; H01L29/08 ; H01L29/10 ; H01L29/45
Abstract:
A semiconductor device includes a fin-shaped silicon layer on a silicon substrate, and a first insulating film around the fin-shaped silicon layer. A pillar-shaped silicon layer is on the fin-shaped silicon layer, where a pillar diameter of the pillar-shaped silicon layer is equal to a fin width of the fin-shaped silicon layer, and where the pillar diameter and the fin width parallel to the surface. A first diffusion layer is in an upper portion of the fin-shaped silicon layer and a lower portion of the pillar-shaped silicon layer, and a second diffusion layer is in an upper portion of the pillar-shaped silicon layer. A gate insulating film is around the pillar-shaped silicon layer and a metal gate electrode is around the gate insulating film. A metal gate wiring is connected to the metal gate electrode and a contact is on the second diffusion layer.
Public/Granted literature
- US20140042504A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2014-02-13
Information query
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