Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the semiconductor device
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Application No.: US14984284Application Date: 2015-12-30
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Publication No.: US09614090B2Publication Date: 2017-04-04
- Inventor: Ju-youn Kim , Sang-jung Kang , Ji-hwan An
- Applicant: Ju-youn Kim , Sang-jung Kang , Ji-hwan An
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2015-0036761 20150317
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L29/423
Abstract:
A semiconductor device includes at least one first gate structure and at least one second gate structure on a semiconductor substrate. The at least one first gate structure has a flat upper surface extending in a first direction and a first width in a second direction perpendicular to the first direction. The at least one second gate structure has a convex upper surface extending in the first direction and a second width in the second direction, the second width being greater than the first width.
Public/Granted literature
- US20160276485A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE Public/Granted day:2016-09-22
Information query
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