Invention Grant
- Patent Title: Gate structure and method for fabricating the same
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Application No.: US14310999Application Date: 2014-06-20
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Publication No.: US09614091B2Publication Date: 2017-04-04
- Inventor: Jean-Pierre Colinge , Ta-Pen Guo , Carlos H. Diaz
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/788 ; H01L29/423 ; H01L29/49
Abstract:
An apparatus comprises a nanowire having a channel region, a gate structure surrounding a lower portion of the channel region, wherein the gate structure comprises a first dielectric layer comprising a vertical portion and a horizontal portion, a first workfunction metal layer over the first dielectric layer comprising a vertical portion and a horizontal portion and a low-resistivity metal layer over the first workfunction metal layer, wherein an edge of the low-resistivity metal layer and an edge of the vertical portion of the first workfunction metal layer are separated by a dielectric region and the low-resistivity metal layer is electrically coupled to the vertical portion of the first workfunction metal layer through the horizontal portion of the first workfunction metal layer.
Public/Granted literature
- US20150372149A1 Gate Structure and Method for Fabricating the Same Public/Granted day:2015-12-24
Information query
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