Invention Grant
- Patent Title: Semiconductor device and imaging device
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Application No.: US14455168Application Date: 2014-08-08
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Publication No.: US09614099B2Publication Date: 2017-04-04
- Inventor: Shintaro Nakano , Tomomasa Ueda , Kentaro Miura , Nobuyoshi Saito , Tatsunori Sakano , Yuya Maeda , Masaki Atsuta , Hajime Yamaguchi
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-196706 20130924
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/146 ; H01L27/12
Abstract:
According to one embodiment, a semiconductor device includes a semiconductor layer including a first semiconductor portion and a second semiconductor portion being continuous with the first semiconductor portion, a first gate electrode, a second gate electrode, an insulating film. The first semiconductor portion includes a first portion, a second portion and a third portion provided between the first portion and the second portion. The second semiconductor portion includes a fourth portion separated from the first portion, a fifth portion separated from the second portion, and a sixth portion provided between the forth portion and the fifth portion. The first gate electrode is separated from the third portion. The second gate electrode is separated from the sixth portion. The insulating film is provided at a first position between the first gate electrode and the semiconductor layer and at a second position between the second gate electrode and the semiconductor layer.
Public/Granted literature
- US20150084040A1 SEMICONDUCTOR DEVICE AND IMAGING DEVICE Public/Granted day:2015-03-26
Information query
IPC分类:
