Invention Grant
- Patent Title: Impedance adaptation in a THz detector
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Application No.: US14735372Application Date: 2015-06-10
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Publication No.: US09614116B2Publication Date: 2017-04-04
- Inventor: Philippe Le Bars , Walaa Sahyoun , Wojciech Knap , Nina Diakonova , Dominique Coquillat
- Applicant: CANON KABUSHIKI KAISHA
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Canon USA, Inc. I.P. Division
- Priority: GB1410640.5 20140613
- Main IPC: H01L31/09
- IPC: H01L31/09 ; H01L31/113 ; H01L27/14

Abstract:
At least one electronic device, system and method of manufacturing an electromagnetic wave detector are provided herein. The electronic device for receiving at least one electromagnetic wave of a given frequency may comprise at least one first field effect transistor, and at least one antenna configured to receive the at least one electromagnetic wave and connected to a gate of the at least one first field effect transistor, wherein a length of the gate is in a same order of magnitude as an oscillation length of an oscillation regime of the at least one first field effect transistor at the given frequency, and a width of the gate is such that an impedance presented by the at least one first field effect transistor in the oscillation regime is adapted to an impedance of the at least one antenna.
Public/Granted literature
- US20150364508A1 Impedance adaptation in a THz detector Public/Granted day:2015-12-17
Information query
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