Invention Grant
- Patent Title: Substrate having annealed aluminum nitride layer formed thereon and method for manufacturing the same
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Application No.: US14634713Application Date: 2015-02-27
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Publication No.: US09614124B2Publication Date: 2017-04-04
- Inventor: Hiroyuki Fukuyama , Hideto Miyake
- Applicant: TOHOKU UNIVERSITY , MIE UNIVERSITY
- Applicant Address: JP Sendai, Miyagi JP Tsu, Mie
- Assignee: TOHOKU UNIVERSITY,MIE UNIVERSITY
- Current Assignee: TOHOKU UNIVERSITY,MIE UNIVERSITY
- Current Assignee Address: JP Sendai, Miyagi JP Tsu, Mie
- Agency: Rabin & Berdo, P.C.
- Main IPC: H01L31/0256
- IPC: H01L31/0256 ; H01L33/12 ; H01L33/00 ; H01L33/32 ; H01S5/323
Abstract:
A substrate having an annealed AlN layer includes a substrate made of a material selected from among a group including sapphire, silicon carbide (SiC), and aluminum nitride (AlN), and an aluminum nitride (AlN) layer formed on the substrate and having a thickness of 100 nm or greater. The aluminum nitride layer is annealed at a prescribed annealing temperature and in a nitrogen/carbon monoxide (N2/CO) mixed gas atmosphere, and the nitrogen/carbon monoxide (N2/CO) mixed gas has a mixture ratio of N2 gas/CO gas in a range of 0.95/0.05 to 0.4/0.6.
Public/Granted literature
- US20160254411A1 SUBSTRATE HAVING ANNEALED ALUMINUM NITRIDE LAYER FORMED THEREON AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2016-09-01
Information query
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