Invention Grant
- Patent Title: Phase change material layers
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Application No.: US14259594Application Date: 2014-04-23
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Publication No.: US09614152B2Publication Date: 2017-04-04
- Inventor: Dohyung Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0092857 20130806
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
A phase change material layer includes germanium (Ge), antimony (Sb), tellurium (Te) and at least one impurity elements. An atomic concentration of impurity elements ranges from about 0
Public/Granted literature
- US20150041747A1 PHASE CHANGE MATERIAL LAYERS Public/Granted day:2015-02-12
Information query
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