Invention Grant
- Patent Title: Semiconductor laser element and near-field light output device using same
-
Application No.: US15037552Application Date: 2014-08-27
-
Publication No.: US09614350B2Publication Date: 2017-04-04
- Inventor: Kentaroh Tani , Toshiyuki Kawakami , Akira Ariyoshi
- Applicant: Sharp Kabushiki Kaisha
- Applicant Address: JP Osaka-shi
- Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee Address: JP Osaka-shi
- Agency: Morrison & Foerster LLP
- Priority: JP2013-240971 20131121
- International Application: PCT/JP2014/072414 WO 20140827
- International Announcement: WO2015/075988 WO 20150528
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/028 ; H01S5/042 ; H01S5/022 ; H01S5/22 ; H01S5/02 ; H01S5/16

Abstract:
A semiconductor laser element is provided with: a substrate formed of a semiconductor; a semiconductor laminated film, which is laminated on the substrate, and which includes an active layer; a first electrode and a second electrode, which are provided on surfaces parallel to the active layer on the side where the semiconductor laminated film is formed on the substrate; and a facet protection film that is provided on both the facets, which are perpendicular to the active layer, and which face each other. In the semiconductor laser element, the facet is used as a fixing surface for the semiconductor laser element, said facet having the facet protection film formed thereon.
Public/Granted literature
- US20160322780A1 SEMICONDUCTOR LASER ELEMENT AND NEAR-FIELD LIGHT OUTPUT DEVICE USING SAME Public/Granted day:2016-11-03
Information query