Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14918905Application Date: 2015-10-21
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Publication No.: US09614439B2Publication Date: 2017-04-04
- Inventor: Masao Yamashiro , Tatsuya Bando , Kunitoshi Kamada , Hiroshi Sato
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Koutou-ku, Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Koutou-ku, Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-056077 20120313
- Main IPC: H02M3/07
- IPC: H02M3/07 ; H02M3/156 ; G05F1/625 ; G11C16/28 ; G11C16/30 ; G11C5/14

Abstract:
A semiconductor device includes a voltage hold circuit that raises a second boosted voltage with rise of an output voltage of a booster circuit that generates a first boosted voltage and then maintains the second boosted voltage at a point when the output voltage reaches a hold voltage level after that, and a first switch that short-circuits a first output terminal through which the first boosted voltage is output and a second output terminal through which the second boosted voltage is output until the output voltage reaches the hold voltage level.
Public/Granted literature
- US20160043639A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-02-11
Information query
IPC分类: