Invention Grant
- Patent Title: Programmable delay circuit including hybrid fin field effect transistors (finFETs)
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Application No.: US14843033Application Date: 2015-09-02
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Publication No.: US09614507B2Publication Date: 2017-04-04
- Inventor: Vijay K. Ankenapalli , Ayan Datta , Sumitha George , Charudhattan Nagarajan , James D. Warnock
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Margaret A. McNamara
- Main IPC: H03K5/134
- IPC: H03K5/134 ; H01L27/088

Abstract:
Embodiments relate to programmable delay circuit. An aspect includes a first stage comprising a first hybrid fin field effect transistor (finFET) comprising a first gate corresponding to a first control FET, and a second gate corresponding to a first default FET, and a first plurality of fins, wherein the first gate and the second gate of the first stage each partially control a first shared fin of the first plurality of fins. Another aspect includes a second stage connected in series with the first stage, the second stage comprising a second hybrid finFET comprising a first gate corresponding to a second control FET, and a second gate corresponding to a second default FET, and a second plurality of fins, wherein the first gate and the second gate of the second stage each partially control a second shared fin of the second plurality of fins.
Public/Granted literature
- US20170012616A1 PROGRAMMABLE DELAY CIRCUIT INCLUDING HYBRID FIN FIELD EFFECT TRANSISTORS (FINFETS) Public/Granted day:2017-01-12
Information query
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