Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14472226Application Date: 2014-08-28
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Publication No.: US09618562B2Publication Date: 2017-04-11
- Inventor: Kiyohiro Furutani
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Priority: JP2013-176578 20130828
- Main IPC: G01R31/26
- IPC: G01R31/26 ; G11C29/00 ; G11C29/12 ; G11C5/14

Abstract:
Disclosed herein is an apparatus that includes a first internal-potential generation circuit that generates a first internal potential from a power supply potential and that outputs the first internal potential to a first node, and an internal-potential force circuit that includes a first switch element provided between the first node and a second external terminal. The internal-potential force circuit causes the first switch element to enter into an off-state when the test signal supplied to a third external terminal is activated and a potential level of a first external terminal is a first level, and causes the first switch element to enter into an on-state when the test signal supplied to the third external terminal is activated and the potential level of the first external terminal is a second level different from the first level.
Public/Granted literature
- US20150061722A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-03-05
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