Invention Grant
- Patent Title: Method and apparatus for testing IC
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Application No.: US13402439Application Date: 2012-02-22
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Publication No.: US09618569B2Publication Date: 2017-04-11
- Inventor: Ofer Benjamin , Igal Sade , Nasim Nasser
- Applicant: Ofer Benjamin , Igal Sade , Nasim Nasser
- Applicant Address: IL Yokneam
- Assignee: Marvell Israel (M.I.S.L) Ltd.
- Current Assignee: Marvell Israel (M.I.S.L) Ltd.
- Current Assignee Address: IL Yokneam
- Main IPC: G01R31/28
- IPC: G01R31/28 ; G01R31/317

Abstract:
A testing method includes measuring an electrical parameter of a device under test (DUT) and a corresponding temperature of the DUT one or more times, determining coefficients in a pre-constructed model based on a plurality of measured values of the electrical parameter and corresponding measured temperatures to characterize a relationship of the electrical parameter to the temperature, and determining a quality of the DUT based on the model and a limit value of the electrical parameter at a specified temperature. The model is pre-constructed to characterize the relationship of the electrical parameter to the temperature with the coefficients that are DUT-dependent variables.
Public/Granted literature
- US20120212246A1 METHOD AND APPARATUS FOR TESTING IC Public/Granted day:2012-08-23
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