Invention Grant
- Patent Title: Detection circuit for relative error voltage
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Application No.: US14436605Application Date: 2013-09-22
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Publication No.: US09618571B2Publication Date: 2017-04-11
- Inventor: Yongbo Zhang
- Applicant: ZTE CORPORATION
- Applicant Address: CN Shenzhen
- Assignee: SANECHIPS TECHNOLOGY CO., LTD.
- Current Assignee: SANECHIPS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Shenzhen
- Agency: Plumsea Law Group, LLC
- Priority: CN201220534856U 20121018
- International Application: PCT/CN2013/083896 WO 20130922
- International Announcement: WO2014/059850 WO 20140424
- Main IPC: G01R31/28
- IPC: G01R31/28 ; G01R19/10

Abstract:
A detection circuit for a relative error voltage, including: a first current mirror, a second current mirror, a third current mirror, a current sink and resistors R1, R2 and R3. A voltage signal to be detected V1 accesses the first current mirror via the resistor R2, and a voltage signal to be detected V2 accesses the second current mirror via the resistor R3; a mirrored-end of the first current mirror is connected to the current sink, and a mirroring-end thereof is connected to a mirrored-end of the third current mirror; a mirrored-end of the second current mirror is connected to the current sink, and a mirroring-end thereof is connected to a mirroring-end of the third current mirror; the current sink is grounded via the resistor R1; and the third current mirror converts double-ended currents of the first and the second current mirrors to single-ended currents to output as voltage signals.
Public/Granted literature
- US20160169963A1 Detection Circuit For Relative Error Voltage Public/Granted day:2016-06-16
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