Invention Grant
- Patent Title: Apparatus for testing a semiconductor device and method of testing a semiconductor device
-
Application No.: US14552926Application Date: 2014-11-25
-
Publication No.: US09618576B2Publication Date: 2017-04-11
- Inventor: Akihiro Otaka , Mitsunori Nishizawa , Nobuyuki Hirai , Tomonori Nakamura
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2013-247143 20131129
- Main IPC: G01R31/308
- IPC: G01R31/308 ; G01R31/311

Abstract:
A semiconductor device measurement apparatus 1A includes a tester 2 that generates an operational pulse signal to be input to a semiconductor device 3, a light source 5 that generates light, a light branch optical system 6 that irradiates the semiconductor device with the light, a light detector 7 that detects reflected light obtained by the semiconductor device 3 reflecting the light, and outputs a detection signal, an analog signal amplifier 8 that amplifies the detection signal and outputs an amplified signal, and an analysis apparatus 10 that analyzes an operation of the semiconductor device 3 based on the amplified signal and a predetermined correction value, wherein the predetermined correction value is obtained based on a signal obtained by the analog signal amplifier 8 amplifying a signal corresponding to a harmonic of a fundamental frequency of the operational pulse signal.
Public/Granted literature
- US20150153408A1 APPARATUS FOR TESTING A SEMICONDUCTOR DEVICE AND METHOD OF TESTING A SEMICONDUCTOR DEVICE Public/Granted day:2015-06-04
Information query