Invention Grant
- Patent Title: First and second magneto-resistive sensors formed by first and second sections of a layer stack
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Application No.: US14057214Application Date: 2013-10-18
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Publication No.: US09618589B2Publication Date: 2017-04-11
- Inventor: Juergen Zimmer , Harald Witschnig
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: G11B5/39
- IPC: G11B5/39 ; G01R33/09 ; H01L43/12 ; H01L27/22

Abstract:
Embodiments relate to a sensor device including a layer stack 600, the layer stack 600 including at least ferromagnetic and non-magnetic layers formed on a common substrate 620. The sensor device 600 further includes at least a first magneto-resistive sensor element 711 provided by a first section 611 of the layer stack 600. The first magneto-resistive sensor element 711 herein is configured to generate a first signal. The sensor device 600 also includes a second magneto-resistive sensor element 712 provided by a second section 612 of the layer stack 610. The second magneto-resistive sensor element 712 herein is configured to generate a second signal for verifying the first signal.
Public/Granted literature
- US20150108972A1 SENSOR DEVICE AND METHOD Public/Granted day:2015-04-23
Information query
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