Invention Grant
- Patent Title: Method of overlay in extreme ultra-violet (EUV) lithography
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Application No.: US15191831Application Date: 2016-06-24
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Publication No.: US09618856B2Publication Date: 2017-04-11
- Inventor: Chia-Ching Huang , Chia-Hao Hsu , Chia-Chen Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: G03B27/52
- IPC: G03B27/52 ; G03F7/20 ; H01L21/683 ; C23C16/04 ; C23C16/34 ; C23C16/56

Abstract:
The present disclosure relates to a deformable reticle chuck. In some embodiments, an extreme ultraviolet (EUV) deformable reticle chuck has a substrate of insulating material with a plurality of protrusions extending outward from a first side of the substrate. A resistive material is arranged along a second side of the substrate below the plurality of protrusions. The resistive material is configured to expand in response to an applied current or voltage to adjust a shape of a reticle.
Public/Granted literature
- US20160306285A1 METHOD OF OVERLAY IN EXTREME ULTRA-VIOLET (EUV) LITHOGRAPHY Public/Granted day:2016-10-20
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