Invention Grant
- Patent Title: Write mechanism for storage class memory
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Application No.: US13992809Application Date: 2011-12-30
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Publication No.: US09619174B2Publication Date: 2017-04-11
- Inventor: Feng Chen , Michael P. Mesnier
- Applicant: Feng Chen , Michael P. Mesnier
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop Pruner & Hu, P.C.
- International Application: PCT/US2011/068086 WO 20111230
- International Announcement: WO2013/101179 WO 20130704
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G06F3/06 ; G06F12/14 ; G06F12/1009

Abstract:
Storage class memory may be used in an architecture to achieve high performance, high reliability, high compatibility. In some embodiments, reads may be handled in a conventional way used in a memory based model. However writes do not use a memory based model but instead correspond to a storage based model. The hybrid nature can be achieved by setting the storage class memory to be write protected so that all writes must go through a software based block device interface. In some embodiments, the software based block device interface prevents erroneous writes to the storage class memory.
Public/Granted literature
- US20140006686A1 Write Mechanism for Storage Class Memory Public/Granted day:2014-01-02
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