Invention Grant
- Patent Title: Internal power supply circuit, semiconductor device, and semiconductor device manufacturing method
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Application No.: US12793033Application Date: 2010-06-03
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Publication No.: US09620177B2Publication Date: 2017-04-11
- Inventor: Koichiro Hayashi
- Applicant: Koichiro Hayashi
- Applicant Address: LU Luxembourg
- Assignee: Longitude Semiconductor S.a.r.l.
- Current Assignee: Longitude Semiconductor S.a.r.l.
- Current Assignee Address: LU Luxembourg
- Priority: JP2009-133732 20090603
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
An internal power supply circuit supplies a power supply voltage to an internal circuit of a semiconductor device via an internal power supply line. The internal power supply circuit includes a reference potential generating circuit that is configured to generate a plurality of reference potentials having different temperature dependencies from each other, an internal voltage generating circuit that generates the power supply voltage with reference to a reference potential generated by the reference potential generating circuit, and a control circuit that selects a reference potential to be generated by the reference potential generating circuit.
Public/Granted literature
- US20100309735A1 INTERNAL POWER SUPPLY CIRCUIT, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2010-12-09
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