Invention Grant
- Patent Title: All around electrode for novel 3D RRAM applications
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Application No.: US14133057Application Date: 2013-12-18
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Publication No.: US09620205B2Publication Date: 2017-04-11
- Inventor: Federico Nardi , Sergey Barabash , Yun Wang
- Applicant: Intermolecular Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: G11C13/00
- IPC: G11C13/00 ; H01L45/00
Abstract:
A resistive switching memory device can include three or more electrodes interfacing a switching layer, including a top electrode, a bottom electrode, and a side electrode. The top and bottom electrodes can be used for forming conductive filaments and for reading the memory device. The side electrode can be used to control the resistance state of the switching layer.
Public/Granted literature
- US20150016178A1 All around electrode for novel 3D RRAM applications Public/Granted day:2015-01-15
Information query
