Invention Grant
- Patent Title: Level compensation in multilevel memory
-
Application No.: US14790438Application Date: 2015-07-02
-
Publication No.: US09620236B2Publication Date: 2017-04-11
- Inventor: Violante Moschiano , Walter Di Francesco
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/34 ; G11C11/56

Abstract:
Some embodiments include apparatuses and methods having a compensation unit to provide a compensation value based at least in part on a threshold voltage value of a memory cell. At least one of such embodiments includes a controller to select a code during an operation of retrieving information from the memory cell to represent a value of information stored in the memory cell. Such a code can be associated with an address having an address value based at least in part on the compensation value. Additional apparatuses and methods are described.
Public/Granted literature
- US20150302931A1 LEVEL COMPENSATION IN MULTILEVEL MEMORY Public/Granted day:2015-10-22
Information query