Invention Grant
- Patent Title: Memory array and operation method for memory device, including data inversion
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Application No.: US14670717Application Date: 2015-03-27
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Publication No.: US09620239B2Publication Date: 2017-04-11
- Inventor: Cheng-Tai Huang , Chia-Chi Yang , Chen-Yi Huang
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Shanghai
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201410181422 20140430
- Main IPC: G11C17/16
- IPC: G11C17/16 ; G11C17/18

Abstract:
A method for operating a memory is provided. The memory has an array of memory cells arranged in a plurality of rows and columns. Each row includes a label storage unit. The method includes receiving a first to-be-programmed data set to be stored into a target row and determining whether a condition is satisfied. When the condition is satisfied, performing a first operation on the first to-be-programmed data set to obtain a second to-be-programmed data set, programming the second to-be-programmed data set into the target row of memory cells, and setting the value of the label storage, unit to be a first labeling value. When the condition is not satisfied, performing a second operation on the first to-be-programmed data set to program the first to-be-programmed data set into the target row of memory cells, and setting the value of the label storage unit to be a second labeling value.
Public/Granted literature
- US20150318050A1 MEMORY ARRAY AND OPERATION METHOD FOR MEMORY DEVICE Public/Granted day:2015-11-05
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