Invention Grant
- Patent Title: In situ control of ion angular distribution in a processing apparatus
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Application No.: US15065141Application Date: 2016-03-09
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Publication No.: US09620335B2Publication Date: 2017-04-11
- Inventor: Costel Biloiu , Nini Munoz , Ludovic Godet , Anthony Renau
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
A processing apparatus may include a plasma source coupled to a plasma chamber to generate a plasma in the plasma chamber, an extraction plate having an aperture disposed along a side of the plasma chamber; a deflection electrode disposed proximate the aperture and configured to define a pair of plasma menisci when the plasma is present in the plasma chamber; and a deflection electrode power supply to apply a bias voltage to the deflection electrode with respect to the plasma, wherein a first bias voltage applied to the deflection electrode is configured to generate a first angle of incidence for ions extracted through the aperture from the plasma, and a second bias voltage applied to the deflection electrode is configured to generate a second angle of incidence of ions extracted through the aperture from the plasma, the second angle of incidence being different from the first angle of incidence.
Public/Granted literature
- US20160189935A1 IN SITU CONTROL OF ION ANGULAR DISTRIBUTION IN A PROCESSING APPARATUS Public/Granted day:2016-06-30
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