Invention Grant
- Patent Title: Method of manufacturing semiconductor device
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Application No.: US14554445Application Date: 2014-11-26
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Publication No.: US09620353B2Publication Date: 2017-04-11
- Inventor: Junichi Igarashi , Katsuhiro Sato , Masaaki Hirakawa
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-248099 20131129
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/02

Abstract:
A method of manufacturing a semiconductor device including attaching, by a liquid treatment, a first liquid to a surface of a semiconductor substrate having a fine pattern formed therein; substituting the first liquid attached to the surface of the semiconductor substrate with a solution, the solution comprising a sublimate dissolved in a second liquid; vaporizing the second liquid and precipitating the sublimate to the surface of the semiconductor substrate to form a solid precipitate comprising the sublimate; and removing the precipitate by sublimation. For example, the sublimate may be a material having at least two carboxyl groups bonded to cyclohexane or a material formed of two carboxyl groups bonded to benzene with the bonding sites of the two carboxyl groups being adjacent to one another.
Public/Granted literature
- US20150155159A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2015-06-04
Information query
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