Invention Grant
- Patent Title: Method for manufacturing semiconductor substrate with diffusion agent composition
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Application No.: US14872714Application Date: 2015-10-01
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Publication No.: US09620354B2Publication Date: 2017-04-11
- Inventor: Yoshihiro Sawada
- Applicant: TOKYO OHKA KOGYO CO., LTD.
- Applicant Address: JP Kawasaki-shi
- Assignee: TOKYO OHKA KOGYO CO., LTD.
- Current Assignee: TOKYO OHKA KOGYO CO., LTD.
- Current Assignee Address: JP Kawasaki-shi
- Agency: Knobbe, Martens, Olson & Bear LLP
- Priority: JP2014-205252 20141003; JP2015-132821 20150701; JP2015-192333 20150929
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/22 ; H01L21/225 ; H01L21/228
Abstract:
A method for manufacturing a semiconductor substrate. An impurity diffusion ingredient can be diffused well and uniformly from a coating film into a semiconductor substrate by forming a coating film having a thickness of not more than 30 nm on a surface of a semiconductor substrate with a diffusion agent composition containing an impurity diffusion ingredient and a silicon compound that can be hydrolyzed to produce a silanol group.
Public/Granted literature
- US20160099149A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE Public/Granted day:2016-04-07
Information query
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