Method for patterning sub-50-nanometers structures

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US09620365B2 Method for patterning sub-50-nanometers structures 有权

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Patent Title: Method for patterning sub-50-nanometers structures
Application No.: US14904350

Application Date: 2014-07-11
Publication No.: US09620365B2

Publication Date: 2017-04-11
Inventor: Shankar B. Rananavare , Moshood Kayode Morakinyo
Applicant: Portland State University
Applicant Address: US OR Portland
Assignee: Portland State University
Current Assignee: Portland State University
Current Assignee Address: US OR Portland
Agency: Blank Rome LLP
International Application: PCT/US2014/046347 WO 20140711
International Announcement: WO2015/006688 WO 20150115
Main IPC: H01L21/308
IPC: H01L21/308 ; H01L21/033 ; H01L21/027 ; H01L21/311 ; H01L21/768 ; C03C15/00 ; C23F1/00

Method for patterning sub-50-nanometers structures

Abstract:

Sub-50-nm structures are formed using sequential top-down and bottom up lithographies in conjunction with selective etching. The preferred rendition of the method involves: (a) rough lithographic patterning, (b) size/shape selected nanostructure deposition, (c) resist reflow around the nanostructures, and (d) selective removal/etching of the nanostructure.

Public/Granted literature

US20160155660A1 METHOD FOR PATTERNING SUB-50-NANOMETERS STRUCTURES Public/Granted day:2016-06-02

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/308	.......应用掩膜的（H01L21/3063，H01L21/3065优先）