Invention Grant
- Patent Title: Multi-layer mask including non-photodefinable laser energy absorbing layer for substrate dicing by laser and plasma etch
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Application No.: US14775651Application Date: 2014-03-11
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Publication No.: US09620379B2Publication Date: 2017-04-11
- Inventor: Wei-Sheng Lei , Mohammad Kamruzzaman Chowdhury , Todd Egan , Brad Eaton , Madhava Rao Yalamanchili , Ajay Kumar
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor Zafman LLP
- International Application: PCT/US2014/023767 WO 20140311
- International Announcement: WO2014/159464 WO 20141002
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/78 ; H01L21/308 ; H01L21/3065 ; B23K26/364 ; B23K26/40 ; B23K26/402 ; H01L21/673 ; H01L21/687 ; H01L21/82 ; B23K103/16 ; B23K103/00

Abstract:
Methods of dicing substrates having a plurality of ICs. A method includes forming a multi-layered mask comprising a laser energy absorbing, non-photodefinable topcoat disposed over a water-soluble base layer disposed over the semiconductor substrate. Because the laser light absorbing material layer is non-photodefinable, material costs associated with conventional photo resist formulations may be avoided. The mask is direct-write patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. Absorption of the mask layer within the laser emission band (e.g., UV band and/or green band) promotes good scribe line quality. The substrate may then be plasma etched through the gaps in the patterned mask to singulate the IC with the mask protecting the ICs during the plasma etch. The soluble base layer of the mask may then be dissolved subsequent to singulation, facilitating removal of the layer.
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