Invention Grant
- Patent Title: Methods for fabricating semiconductor devices having fin-shaped patterns by selectively removing oxidized fin-shaped patterns
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Application No.: US14968999Application Date: 2015-12-15
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Publication No.: US09620406B2Publication Date: 2017-04-11
- Inventor: Jung-Gun You , Se-Wan Park , Seung-Woo Do , In-Won Park , Sug-Hyun Sung
- Applicant: Jung-Gun You , Se-Wan Park , Seung-Woo Do , In-Won Park , Sug-Hyun Sung
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2015-0012630 20150127
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L29/66 ; H01L29/417 ; H01L29/78 ; H01L29/165
Abstract:
A method for fabricating a semiconductor device is provided. The method includes forming a first fin-shaped pattern including an upper part and a lower part on a substrate, forming a second fin-shaped pattern by removing a part of the upper part of the first fin-shaped pattern, forming a dummy gate electrode intersecting with the second fin-shaped pattern on the second fin-shaped pattern, and forming a third fin-shaped pattern by removing a part of an upper part of the second fin-shaped pattern after forming the dummy gate electrode, wherein a width of the upper part of the second fin-shaped pattern is smaller than a width of the upper part of the first fin-shaped pattern and is greater than a width of an upper portion of the third fin-shaped pattern.
Public/Granted literature
- US20160218180A1 METHODS FOR FABRICATING SEMICONDUCTOR DEVICES HAVING FIN-SHAPED PATTERNS Public/Granted day:2016-07-28
Information query
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