Invention Grant
- Patent Title: Semiconductor arrangement and formation thereof
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Application No.: US15160257Application Date: 2016-05-20
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Publication No.: US09620420B2Publication Date: 2017-04-11
- Inventor: Chen-Hung Lu , Chie-luan Lin , Ming-Yi Lin , Yen-Sen Wang , Jyh-Kang Ting
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/768 ; H01L29/45 ; H01L29/06 ; H01L23/48 ; H01L27/088 ; H01L29/66
Abstract:
A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes a metal connect over and connected to a first active region, over and connected to a second active region and over a shallow trench isolation (STI) region thereby connecting the first active region to the second active region. A metal contact is over and connected to a gate in the STI region. The metal connect is formed in a first opening and the metal contact is formed in a second opening, where the first opening and the second opening are formed concurrently using a single mask. The semiconductor arrangement formed using a single mask is less expensive to fabricate and requires fewer etching operations than a semiconductor arrangement formed using multiple masks.
Public/Granted literature
- US20160268170A1 SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF Public/Granted day:2016-09-15
Information query
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