Invention Grant
- Patent Title: Semiconductor device having connection terminal of solder
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Application No.: US15050558Application Date: 2016-02-23
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Publication No.: US09620470B2Publication Date: 2017-04-11
- Inventor: Kozo Shimizu , Seiki Sakuyama , Toyoo Miyajima
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2013-013433 20130128
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/498 ; H01L21/768 ; H05K3/34 ; B23K35/24 ; B23K35/26 ; B23K35/00 ; B23K35/02 ; H05K3/24 ; B23K101/40
Abstract:
A method of manufacturing a semiconductor device includes forming a barrier metal film on a surface of at least one of a first electrode of a wiring board and a second electrode of a semiconductor element, providing a connection terminal between the first and second electrodes, the connection terminal being made of solder containing tin, bismuth and zinc, and bonding the connection terminal to the barrier metal film by heating the connection terminal and maintaining the temperature of the connection terminal at a constant temperature not lower than a melting point of the solder for a certain period of time.
Public/Granted literature
- US20160172322A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE Public/Granted day:2016-06-16
Information query
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