Invention Grant
- Patent Title: Semiconductor integrated circuit including power TSVS
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Application No.: US14928586Application Date: 2015-10-30
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Publication No.: US09620483B2Publication Date: 2017-04-11
- Inventor: Young Hee Yoon , Ga Young Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: KR10-2012-0090005 20120817
- Main IPC: G01R23/175
- IPC: G01R23/175 ; H01L25/065 ; H01L23/538 ; H01L49/02 ; H01L23/48 ; H01L23/528 ; H01L23/00
Abstract:
A semiconductor device including power TSVs for stably supplying a power source is described. A semiconductor device includes a chip power pad placed in a first region of a chip, power through silicon vias (TSVs) connected to the chip power pad and placed in the second region of each of the chips, and metal lines configured to couple the chip power pad and the power TSVs.
Public/Granted literature
- US20160056130A1 SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING POWER TSVS Public/Granted day:2016-02-25
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