- Patent Title: Semiconductor device and an integrated circuit comprising an ESD protection device, ESD protection devices and a method of manufacturing the semiconductor device
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Application No.: US14427024Application Date: 2012-09-12
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Publication No.: US09620495B2Publication Date: 2017-04-11
- Inventor: Patrice Besse , Alexis Huot-Marchand , Jean-Philippe Laine , Alain Salles
- Applicant: Patrice Besse , Alexis Huot-Marchand , Jean-Philippe Laine , Alain Salles
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Agent Charlene R. Jacobsen
- International Application: PCT/IB2012/002023 WO 20120912
- International Announcement: WO2014/041388 WO 20140320
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/74 ; H01L21/8234 ; H01L27/06
Abstract:
A semiconductor device is provided which comprises an ESD protection device. The structure of the semiconductor device comprises a p-doped isolated region in which a structure is manufactured which operates as a Silicon Controlled Rectifier which is coupled between an I/O pad and a reference voltage or ground voltage. The semiconductor device also comprises a pnp transistor which is coupled parallel to the Silicon Controlled Rectifier. The base of the transistor is coupled to the gate of the Silicon Controlled Rectifier. In an optional embodiment, the base and gate are also coupled to the I/O pad.
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