A memory device includes a plurality of memory cells arranged in a string substantially perpendicular to the major surface of the substrate in a plurality of device levels, at least one first select gate electrode located between the major surface of the substrate and the plurality of memory cells, at least one second select gate electrode located above the plurality of memory cells, a semiconductor channel having a portion that extends vertically along a direction perpendicular to the major surface, a first memory film contacting a first side of the semiconductor channel, and a second memory film contacting a second side of the semiconductor channel. The second memory film is electrically isolated from the first memory film, and is located at a same level as the first memory film.