Invention Grant
- Patent Title: LTPS array substrate
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Application No.: US14426464Application Date: 2014-12-29
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Publication No.: US09620536B2Publication Date: 2017-04-11
- Inventor: Peng Du , Yutong Hu
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
- Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
- Current Assignee Address: CN Shenzhen, Guangdong
- Agent Andrew C. Cheng
- Priority: CN201410784820 20141216
- International Application: PCT/CN2014/095326 WO 20141229
- International Announcement: WO2016/095263 WO 20160623
- Main IPC: H01L27/12
- IPC: H01L27/12 ; G02F1/1362 ; G02F1/1333 ; G02F1/1368 ; H01L29/45 ; H01L29/49 ; H01L29/51 ; H01L29/786

Abstract:
An LTPS array substrate includes a plurality of LTPS thin-film transistors and a bottom transparent conductive layer, a protective layer, and a top transparent conductive layer. Each LTPS thin-film transistor includes a substrate, a patternized light shield layer, a buffering layer, a patternized poly-silicon layer, a gate insulation layer, a gate line, and a common electrode line, an insulation layer, a drain and a source, and a planarization layer that are formed to sequentially stack on each other. The light shield layer covers the scan line and the source/drain. A patternized third metal layer is between the bottom transparent conductive layer and the protective layer and includes a first zone and a second zone intersecting the first zone. The first zone shields the source line. A portion of the second zone overlaps a side portion of the light shield layer that is close to the source/drain electrode.
Public/Granted literature
- US20160343747A1 LTPS ARRAY SUBSTRATE Public/Granted day:2016-11-24
Information query
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