Invention Grant
- Patent Title: Magnetoresistive element and manufacturing method thereof
-
Application No.: US14627552Application Date: 2015-02-20
-
Publication No.: US09620561B2Publication Date: 2017-04-11
- Inventor: Toshihiko Nagase , Daisuke Watanabe , Youngmin Eeh , Koji Ueda , Kazuya Sawada , Makoto Nagamine
- Applicant: Toshihiko Nagase , Daisuke Watanabe , Youngmin Eeh , Koji Ueda , Kazuya Sawada , Makoto Nagamine
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/82 ; H01L27/22 ; H01L43/08 ; H01L21/677 ; H01L43/12
Abstract:
According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes an underlayer containing aluminum (Al), nitrogen (N) and X. The X is an element other than Al and N. A first magnetic layer is provided on the underlayer. A nonmagnetic layer is provided on the first magnetic layer. A second magnetic layer is provided on the nonmagnetic layer.
Public/Granted literature
- US20160072046A1 MAGNETORESISTIVE ELEMENT AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-03-10
Information query
IPC分类:
