Semiconductor device having termination region with laterally heterogeneous insulating films
Abstract:
A semiconductor device according to an embodiment includes a semiconductor substrate having a first surface and a second surface. The semiconductor substrate includes an element region and a termination region provided around the element region. The termination region has a first semiconductor region of a first conductivity type provided at the first surface of the semiconductor substrate and a second semiconductor region of a second conductivity type provided between the first semiconductor region and the second surface. The semiconductor device further includes a first insulating film provided on the first semiconductor region, a second insulating film provided on the first semiconductor region and having a portion interposed between the first insulating films, a first electrode provided on the first surface of the element region and electrically connected to the first semiconductor region, and a second electrode provided at the second surface of the semiconductor substrate.
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