Invention Grant
- Patent Title: Semiconductor device having termination region with laterally heterogeneous insulating films
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Application No.: US14854516Application Date: 2015-09-15
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Publication No.: US09620600B2Publication Date: 2017-04-11
- Inventor: Ryoichi Ohara , Takao Noda
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki kaisha Toshiba
- Current Assignee: Kabushiki kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Priority: JP2015-051679 20150316
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/417 ; H01L29/78 ; H01L29/16

Abstract:
A semiconductor device according to an embodiment includes a semiconductor substrate having a first surface and a second surface. The semiconductor substrate includes an element region and a termination region provided around the element region. The termination region has a first semiconductor region of a first conductivity type provided at the first surface of the semiconductor substrate and a second semiconductor region of a second conductivity type provided between the first semiconductor region and the second surface. The semiconductor device further includes a first insulating film provided on the first semiconductor region, a second insulating film provided on the first semiconductor region and having a portion interposed between the first insulating films, a first electrode provided on the first surface of the element region and electrically connected to the first semiconductor region, and a second electrode provided at the second surface of the semiconductor substrate.
Public/Granted literature
- US20160276448A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-09-22
Information query
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