Invention Grant
- Patent Title: Gate all around device structure and Fin field effect transistor (FinFET) device structure
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Application No.: US14560644Application Date: 2014-12-04
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Publication No.: US09620607B2Publication Date: 2017-04-11
- Inventor: Yu-Lien Huang , Chin-Chi Wang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/78 ; H01L27/092 ; H01L29/775 ; H01L29/10 ; H01L29/06 ; H01L29/267 ; H01L29/165 ; H01L29/205
Abstract:
A gate all around (GAA) device structure, vertical gate all around (VGAA) device structure, horizontal gate all around (HGAA) device structure and fin field effect transistor (FinFET) device structure are provided. The VGAA device structure includes a substrate and an isolation structure formed in the substrate. The VGAA device structure also includes a first transistor structure formed on the substrate, and the first transistor structure includes a vertical structure. The vertical structure includes a source region, a channel region and a drain region, and the channel region is formed between the source region and the drain region. The channel region has a horizontal portion and a sloped portion sloping downward toward the isolation structure. The VGAA device structure further includes a gate stack structure wrapping around the channel region.
Public/Granted literature
- US20160163810A1 GATE ALL AROUND DEVICE STRUCTURE AND FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE Public/Granted day:2016-06-09
Information query
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