Invention Grant
- Patent Title: Sawtooth electric field drift region structure for power semiconductor devices
-
Application No.: US14036696Application Date: 2013-09-25
-
Publication No.: US09620614B2Publication Date: 2017-04-11
- Inventor: Madhur Bobde
- Applicant: Madhur Bobde
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agent Bo-In Lin
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/739 ; H01L29/78 ; H01L29/861 ; H01L29/06 ; H01L29/08 ; H01L29/10
Abstract:
This invention discloses a semiconductor power device formed in a semiconductor substrate includes rows of multiple horizontal columns of thin layers of alternate conductivity types in a drift region of the semiconductor substrate where each of the thin layers having a thickness to enable a punch through the thin layers when the semiconductor power device is turned on. In a specific embodiment the thickness of the thin layers satisfying charge balance equation q*ND*WN=q*NA*WP and a punch through condition of WP
Public/Granted literature
- US20170040434A9 SAWTOOTH ELECTRIC FIELD DRIFT REGION STRUCTURE FOR POWER SEMICONDUCTOR DEVICES Public/Granted day:2017-02-09
Information query
IPC分类:
