A structure having improved electrical signal isolation and linearity is disclosed. The structure includes a buried oxide (“BOX”) layer over a bulk semiconductor layer, a device layer over the buried oxide layer, a compensation implant region near an interface of the buried oxide layer and the bulk semiconductor layer, wherein the compensation implant region is configured to substantially eliminate a parasitic conduction layer near the buried oxide layer. The compensation implant region has a doping concentration of at least one order of magnitude higher than a doping concentration of the bulk semiconductor layer. The structure includes a deep trench extending through the device layer and the buried oxide layer, and a damaged implant region in the bulk semiconductor layer near the deep trench. The structure also includes at least one transistor in the device layer.