Invention Grant
- Patent Title: Quantum well fin-like field effect transistor (QWFinFET) having a two-section combo QW structure
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Application No.: US15043962Application Date: 2016-02-15
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Publication No.: US09620633B2Publication Date: 2017-04-11
- Inventor: Yu-Lien Huang , Chun-Hsiang Fan , Yung-Ta Li
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/775
- IPC: H01L29/775 ; H01L29/78 ; H01L29/66 ; H01L29/15 ; H01L29/08 ; H01L29/06
Abstract:
The present disclosure provides a quantum well fin field effect transistor (QWFinFET). The QWFinFET includes a semiconductor fin over a substrate and a combo quantum well (QW) structure over the semiconductor fin. The combo QW structure includes a QW structure over a top portion of the semiconductor fin and a middle portion of the semiconductor fin. The semiconductor fin and the QW comprise different semiconductor materials. The QWFinFET also includes a gate stack over the combo QW structure.
Public/Granted literature
- US20160163843A1 Quantum Well Fin-Like Field Effect Transistor (QWFINFET) Having a Two-Section Combo QW Structure Public/Granted day:2016-06-09
Information query
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